Work

Enhanced GaSe-Based Vertical Memristors with HfO2 Layer for High-Performance Neuromorphic Computing

Year: 2025

Type: article

Source: ACS Applied Nano Materials

DOI: 10.1021/acsanm.5c01223

Authors: Zhenye Lu, Dawei Li, Enzi Chen, Weijian Li, Tianao Liu, Mingkang Zhang, Xiaotong Zheng, Xiaoying Wang, Xi Wan, Kun Chen

Institutions: Sun Yat-sen University, Key Laboratory of Guangdong Province, State Key Laboratory of Optoelectronic Materials and Technology, Jiangnan University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Guangdong Provincial Pearl River Talents Program, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G494670717, G6919588700, G7644198963

OpenAlex ID: W4409664340

FWCI: 0.904

Cites: 35

Cited by: 4

Related to: 10