Work

The influence on optoelectronic characteristics of MOS capacitor solid-state incandescent with AZO, GZO and ITO top electrodes

Year: 2025

Type: article

Abstract: Transparent electrodes, as a key component of light-emitting devices, significantly influence their optoelectronic performance. This study investigates the impact of AZO, GZO, and ITO transparent top electrodes on the optoelectronic characteristics of MOS capacitor solid-state incandescent light-emitting devices. The results illustrate that the ITO top electrode sample exhibit significant decrease in optoelectronic characteristics after 2 h continuous emission, while AZO and GZO electrodes maintain superior stability. For AZO and GZO top electrodes samples, the emitting intensity decrease by 6.6 % and 12.7 %, respectively, and current density decrease by 6.3 % and 10 %. In contrast, the ITO top electrode sample suffer a 49.6 % reduction in emitting intensity and a 45 % drop in current density. Microscopic analysis prove that the structural degradation of ITO under high emitting temperature cause its performance degradation, whereas AZO and GZO electrodes maintain stable structural integrity. This work illustrates the enhanced thermal stability and emitting durability of AZO and GZO electrodes compared to conventional ITO in high-temperature environments.

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2025.109590

Authors: Lingguang Liu, Zhuo Chen, Quanwei Zhang, Zhigang Zang, Xueqiang Liu, Shuang Zhao

Institution: Yanshan University

Language: English

Topic: ZnO doping and properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Estimated APC paid: $3,540