A study on grain boundary barrier layer solid aluminum capacitors
Year: 2025
Type: article
Abstract: This study employs solid-state and chemical plating methods to fabricate aluminum grain boundary capacitors using Al@CuO composite materials. The materials were prepared under varying compact pressures (200 psi, 500 psi, and 700 psi) and thermal treatment (450°C, 500°C, and 550°C). The dielectric layer structure, comprising aluminum oxide and copper oxide, was successfully synthesized as evidenced by the crystal structures and chemical bonds of the constituent materials. XRD and XPS analysis confirmed the composition of the aluminum grain boundary capacitors. SEM and STEM data revealed a layered grain boundary structure. Observations of thermite reactions and solid-state diffusion mechanisms contributed to the formation of this layered structure. Each grain exhibited a core-shell configuration (aluminum core / aluminum oxide grain boundary layer / cuprous oxide shell layer / copper oxide grain boundary layer), effectively functioning as an equivalent capacitor.AC impedance analysis reveals two semicircles for Al coated with CuO compacted under 200 psi and thermally treated at 550℃, respectively representing the grain boundary resistance of Al2O3 dielectric with 30nm in thickness and the grain boundary resistance of CuO dielectric with 376nm in thickness. Consequently, two grains form three equivalent capacitors, resulting in a 表單的頂端表單的底部solid-state aluminum grain boundary capacitor with promising dielectric properties including of dielectric constant 4059, dielectric loss of 0.02 and insulation resistance of 9.41×10⁴ kΩ.
Source: Open Ceramics
Authors: Wen Hsi Lee, C.R. Kuo, Hong En Chen
Institution: National Cheng Kung University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,000
OpenAlex ID: W4409670448