Analyzing the opto electronic dynamics of ZnO/CeO2 nano composites at higher annealing temperatures (600 °C and 900 °C)
Year: 2025
Type: article
Abstract: This study investigates the comparative analysis for the optoelectronic properties of zinc oxide/cerium oxide (ZnO/CeO2) thin films prepared by e-beam evaporation and sputter deposition. A 180 nm cerium oxide (CeO2) layer was deposited on a 370-micron silicon substrate, followed by a 150 nm zinc oxide (ZnO) layer. The bilayer films were annealed at 600 °C and 900 °C. X-ray diffraction (XRD) revealed improved crystallinity post-annealing, while scanning electron microscopy (SEM) showed morphological changes from nano fibers to nano sheets for e-beam evaporation and nano spheres for sputter deposition. The ZnO band gap decreased from 3.00 eV to 2.1 eV with annealing for e-beam evaporation and 2.70 eV to 2.10 eV with annealing for sputter deposition, showing enhanced conductivity in both un annealed and annealed films. Hall Effect measurements indicated increased mobility and resistance with higher annealing temperatures i.e. conductivity changed from 8.97 × 10−3 to 6.68 × 10−1 for e-beam evaporation and 4.45 × 10−1 to 6.18 × 10−1 for sputter deposition. The study demonstrates the tailored optoelectronic characteristics of ZnO/CeO2 thin films, with implications for materials research and electronic devices.
Source: Physica Scripta
Authors: Maryam Ejaz, Rehana Riaz, Ahmed Shuja
Institution: International Islamic University, Islamabad
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,400
OpenAlex ID: W4409671467