Work

Vertical gallium nitride high-temperature avalanche pin diodes with guard rings structure

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/adcf34

Authors: Qizhi Zhu, Yumin Zhang, Yuanhang Sun, Songyuan Xia, Hao Zhou, Wei Liu, Jianfeng Wang, Ke Xu

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, Soochow University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G1676463075

OpenAlex ID: W4409671534

FWCI: 0.62

Cites: 38

Cited by: 2

Related to: 10