Dry etch challenges for patterning middle-of-line (MOL) dual damascene contact trench and via in monolithic CFET (complementary FET)
Year: 2025
Type: conference-paper
DOI: 10.1117/12.3052052
Institutions: IMEC, Tokyo Electron (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4409677261
