Work

Observation of Conductive Interstitial Ga Line Defects in β ‐Ga 2 O 3

Year: 2025

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.202418230

Authors: Liyan Wang, Shuai Liu, Ziyuan Liu, Mengjiao Han, Jiehui Tian, Yuchuan Xiao, Qitian Chen, Debo Hu, Lizhi Zhang, Lixing Kang, Qing Dai

Institutions: National Center for Nanoscience and Technology, University of Chinese Academy of Sciences, University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, Songshan Lake Materials Laboratory

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, National Key Research and Development Program of China

Awards: G1222803113, 使用散射型扫描近场光学显微镜研究范德华晶体的光学各向异性, G230770877, G5959864555, G8542366388

OpenAlex ID: W4409689753

FWCI: 2.119

Cites: 57

Cited by: 13

Related to: 10