Oxygen vacancies facilitated hole transport in ZrO2 films by Al3+ doping for p-Si heterojunction solar cells
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0263895
Authors: Di Zhao, Penghui Ren, Dan Liu, Songyu Li, Jianqiao Wang, Hang Zhou, Xiaoping Wu, Lingbo Xu, Ping Lin, Xuegong Yu, Peng Wang, Can Cui
Institutions: Zhejiang Sci-Tech University, Zhejiang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4409698433