Year: 2025
Type: article
Abstract: Hf0.5Zr0.5O2 based capacitors with a metal–ferroelectric–metal structure have been fabricated in this study, with or without ammonia plasma nitridation at the metal/oxide interfaces. The purpose of this work is to study the role nitrogen plays in the ferroelectric properties of these materials. It is observed that ferroelectricity is enhanced after the interface treatment with NH3 plasma nitridation. The material analysis results indicate that this ferroelectricity improvement results from the diffusion of nitrogen atoms into the Hf0.5Zr0.5O2 film at the metal/oxide interface. Further, the nitrogen binds to the oxygen vacancies at the interface and forms a nitrogen-doped Hf0.5Zr0.5O2 film, enabling oxygen vacancies movement. After 90 s of NH3 plasma interfacial treatment, the metal–ferroelectric–metal capacitor device achieves a maximum memory window of 3.7 V. The results of the electrical test and physical phase analysis demonstrate that NH3 plasma interfacial treatment of ferroelectric thin films can effectively improve the interfacial effect between ferroelectric materials and the top electrode, which in turn enhances the storage performance of the device.
Source: Journal of Applied Physics
DOI: 10.1063/5.0252264
Authors: Jing-wen Hou, Chu-heng Xu, Qian-hui Li, Xin Gong, Bao Zhang, Qi Wang, Zong-liang Huo
Institutions: Chinese Academy of Sciences, Institute of Microelectronics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,500
Awards: G4966582208, G8485377303
OpenAlex ID: W4409702641