Ultrathin Bi2O2Se/Si Heterojunction Photodetector with Tunneling Oxide Passivation for Enhanced Optoelectronic Performance
Year: 2025
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Two-dimensional (2D) materials have garnered significant attention for next-generation optoelectronic devices due to their exceptional physical properties. This study introduces a high-performance ultrathin Bi 2 O 2 Se/Si heterojunction photodetector with tunneling oxide passivation, fabricated using a transfer-free pulsed laser deposition method. The Bi 2 O 2 Se layer exhibits strong air stability and compatibility for practical applications. By incorporating a thin SiO 2 tunneling layer, the heterostructure achieves a low dark current (∼22.3 nA/cm 2 ), a high on/off ratio (∼8 × 10 6 ), and a responsivity of 23.0 A/W. Compared to traditional CdS/Si devices, this photodetector demonstrates superior performance, including faster response time and higher stability. These findings underscore the potential of Bi 2 O 2 Se/Si heterostructures for advanced photonic and optoelectronic applications.
Authors: Tzu-Pu Hung, Wei-Han Chen, Yi-Jyun Chen, Yu-Hao Tu, Zhi-Hao Huang, Yu-Lun Chueh, Chao-Hui Yeh, Chien-Wei Chen, Chien-Wei Chen, Yang-Yu Jhang, Ying-Hao Chu, Cheng-Ying Chen, Cheng-Ying Chen
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Awards: G5098044694, G857655305
OpenAlex ID: W4409706130