Work

Numerical Assessment of CsXY3 (X = Ge, Sn; Y = Cl, Br, I) Perovskites Unified with NiO and Zn(O0.25S0.75) for Solar Cell Applications

Year: 2025

Type: article

Abstract: Future energy harvesting systems need a sustainable perovskite solar cell having low cost and good power conversion efficiency (PCE). Herein, the perovskite CsXY3 (X = Ge, Sn; Y = Cl, Br, I) absorber layer, nickel oxide (NiO) hole‐transport layer, and zinc oxysulfide (ZnO0.25S0.75) electron‐transport layer‐based solar cell devices are investigated using SCAPS‐1D numerical simulations. The CsXY3 solar cell devices performance is assessed by estimating the effects of ample parameters, such as thickness, doping concentration, bulk defects, thickness, and defects at NiO/CsXY3 and CsXY3/Zn(O0.25S0.75) interfaces. The Au/NiO/γ‐CsSnI3/Zn(O0.25S0.75)/FTO device structure shows a low open‐circuit voltage (VOC) ≈1.0580 V, high fill factor ≈88.14%, excellent PCE ≈31.40%, and reasonable short‐circuit current density (JSC) ≈33.68 mA.cm−2. Further, the impact of series/shunt resistances and temperature discloses upright reliability of the Au/NiO/γ‐CsSnI3/Zn(O0.25S0.75)/FTO device structure suitable for cost‐effective solar cell device applications.

Source: physica status solidi (a)

DOI: 10.1002/pssa.202500209

Authors: Srinivas Mattaparthi, Suneel Kumar Singh Bonal, Zong‐Liang Tseng, Robin Khosla

Institutions: National Institute Of Technology Silchar, Indian Institute of Technology Mandi, Ming Chi University of Technology

Language: English

Topic: Perovskite Materials and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

Funder: Indian National Academy of Engineering