Work

Investigation on the performance limits of Dirac-source FETs

Year: 2025

Type: article

Abstract: In this work, we develop a two-dimensional (2D) simulation tool addressing Poisson's equation within the semiconductor section of a 2D Dirac source (DS) field-effect transistor under the assumption of ballistic transport. Next, we compute the current curves using the WKB approximation for the calculation of the transmission probability. The current turns out to be quite sensitive to the tunneling probability at the graphene-semiconductor heterojunction. Different gate-insulating materials and gate lengths are considered with the aim of identifying any possible limitations in the performance of DS-FETs. The obtained results highlight some important issues, while confirming that a minimum subthreshold swing (SS) of 40 mV/dec can be achieved and that SS values below 60 mV/dec can be extended up to three and a half decades.

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2025.109124

Authors: Tommaso Ugolini, Elena Gnani

Institution: University of Bologna

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,410

Funders: HORIZON EUROPE Framework Programme, HORIZON EUROPE Digital, Industry and Space