Work

Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy

Year: 2025

Type: article

Abstract: By using tetramethylsilane (TMSi) as a Si dopant source, thick intentionally Si-doped β-Ga2O3 homoepitaxial layers were grown by low-pressure hot-wall metalorganic vapor phase epitaxy. The Si concentration was linearly controlled by varying the TMSi supply, and a RT electron density nearly equal to the Si concentration was achieved in the range from 1.8 × 1016 to 1.3 × 1019 cm–3. For the layer with a Si concentration and RT electron density of 1.8 × 1016 cm–3, the RT electron mobility of 136 cm2 V–1 s–1 was found to be limited by polar optical phonon scattering.

Source: Applied Physics Express

DOI: 10.35848/1882-0786/adcfee

Authors: Junya Yoshinaga, Yoshiki Iba, Kakeru Kubota, Yuma Terauchi, Takahito Okuyama, Shogo Sasaki, Kazutada Ikenaga, Takeyoshi Onuma, Masataka Higashiwaki, Kazushige Shiina, Shuichi Koseki, Yuzaburo Ban, Yoshinao Kumagai

Institutions: Tokyo University of Agriculture and Technology, Nara Women's University, Nippon Sanso Corporation (Japan), Kogakuin University, Kokugakuin University, Osaka Metropolitan University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,365

OpenAlex ID: W4409717527

FWCI: 1.609

Cites: 36

Cited by: 10

Related to: 10