Work

The effect of vacancy defects on the interfacial thermal resistance at the GaN/diamond interfaces: molecular dynamics simulation

Year: 2025

Type: article

Source: Modelling and Simulation in Materials Science and Engineering

DOI: 10.1088/1361-651x/adcfb7

Authors: Xuejiao Zhang, Yutong Li, Jinxi Liu, Cun Zhang, Lixiang Zhang

Institutions: Shijiazhuang Tiedao University, China Electronics Technology Group Corporation

Language: English

Topic: Thermal properties of materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Hebei Province

Awards: G2488492108, G4513338775, G6741553676, G8032493197

OpenAlex ID: W4409717603

FWCI: 0.207

Cites: 34

Cited by: 1

Related to: 10