Work

Vertical Ultra-Wide Bandgap Al0.5Ga0.5N P-N Memory Diodes

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3563594

Authors: Hang Chen, Shuhui Zhang, Tianpeng Yang, Tingting Mi, Xiaowen Wang, Chao Liu

Institutions: Shandong University, State Key Laboratory of Crystal Materials

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Shandong Provincial Postdoctoral Science Foundation, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1048439995, G2699931331, G4753993084, G8590225944, G95042628

OpenAlex ID: W4409723743

FWCI: 0.623

Cites: 35

Cited by: 2

Related to: 10