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A Broadband Doherty Power Amplifier Design with 22.4-dBm Psat and 31% PAE in 45-nm SOI CMOS for 5G Application

Year: 2025

Type: conference-paper

Source: IEEE Information Technology and Mechatronics Engineering Conference (ITOEC)

DOI: 10.1109/itoec63606.2025.10967951

Authors: Penglin Sun, Fang Han, Zicheng Liu, Quanwen Qi, Xiaoran Li, Xinghua Wang

Institution: Beijing Institute of Technology

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4409725014

FWCI:

Cites: 8

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Related to: 10