Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment
Year: 2025
Type: article
Abstract: In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations. A TMAH surface treatment leads to an improvement in the reverse characteristics of the devices and improvement in breakdown voltage (BV) by almost 200 V compared to HF treatment. Additional XPS characterizations reveal a reduction in both O and C concentration from the surface due to TMAH treatment. When combined with proper edge termination techniques, this approach can help achieve breakdown voltages that are closer to the theoretical limits. • TMAH+HF & HF based surface treatments compared electrically and by XPS. • An increase in BV (>200 V) & significant reduction in leakage current with TMAH+HF. • An enhanced barrier height is also observed for TMAH+HF treated sample.
Institutions: Université de Tours, Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Institut National des Sciences Appliquées Centre Val de Loire, Laboratoire d'Électronique des Technologies de l'Information, GREMAN, Matériaux, Microélectronique, Acoustique, Nanotechnologies, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,500
OpenAlex ID: W4409725520