Work

Operation of junctionless nanowire transistors down to 4.2 Kelvin

Year: 2025

Type: article

Abstract: In this work, an experimental characterization of SOI junctionless nanowire transistors operating in liquid helium temperature is conducted. DC measurements are performed in a temperature range from 300 K down to 4.2 K in devices with variable geometrical dimensions, namely the gate length and the fin width. Different electrical parameters are analyzed, such as the threshold voltage, the subthreshold slope, the low-field mobility, and the drain-induced barrier lowering (DIBL). The temperature reduction helps partially suppress short-channel effects, leading to improvement in these parameters while preserving good electrostatic control, even for highly scaled channel lengths.

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2025.109133