Work

Atomic-Layer-Deposition-Assisted Interfacial Engineering of Metal-Oxide-Metal Devices via Multilayer Structures to Improve Leakage Characteristics

Year: 2025

Type: article

Abstract: The defect-controlled charge transfer mechanism in insulators is crucial for advanced electronic devices. In this study, metal/insulator/metal devices with a multilayer stacked structure are developed in which the off-state current value is reduced by 1 order of magnitude compared to a single-layer structure by modulating the deposition conditions of the atomic layer deposition system. The results of x-ray photoelectron spectroscopy suggest that the pressure modulation of the atomic layer deposition system drives the formation of hydroxyl groups. The different band structures formed by such an oxide layer with more hydroxyl groups further affected the current transport. The possible pathways for carrier transport are presented in detail through electrical analysis and provide the potential for different energy band multilayer stacked structures as advanced electronic devices.

Source: ACS Omega

DOI: 10.1021/acsomega.4c07424

Authors: Zhao-Cheng Chen, Hao-Jung Liu, Yu-Chi Chang, Shoou-Jinn Chang

Institutions: Institute of Microelectronics, Institute of Microelectronics, National Cheng Kung University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,935

Funder: National Science and Technology Council