Work

A Novel 1T-APSUsing 22nm FD-SOI Technology With Record High Tunable Sensitivity Range

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3563988

Authors: Hui Xie, Zehua Wang, Rongshan He, Haihua Wang, Jingya Cao, Peng Zhou, Xiao-Lan Tang, Yu-Long Jiang, Yong Xu, Jing Wan

Institutions: Fudan University, Nanjing University of Posts and Telecommunications, Gannan University of Science and Technology, Guangdong Greater Bay Area Institute of Integrated Circuit and System

Language: English

Topic: CCD and CMOS Imaging Sensors

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, National Key Research and Development Program of China

Awards: G2205578710, G3438922208, G5802249786

OpenAlex ID: W4409760913

FWCI:

Cites: 28

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