Work

Fabrication and Dark Current Analysis of InAsSb-Based nBn Structures for High-Performance Mid-Infrared Applications

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3560265

Authors: Bingfeng Liu, Lianqing Zhu, Lidan Lu, Weiqiang Chen, Ruixin Gong, Yang Chen, Mingli Dong

Institutions: Hefei University of Technology, Beijing Information Science & Technology University

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Young Elite Scientists Sponsorship Program by Tianjin, Beijing Municipal Natural Science Foundation, National Key Research and Development Program of China

Awards: G1818023150, G2204682935, G5465585492, G8786358020

OpenAlex ID: W4409761266

FWCI: 0.227

Cites: 35

Cited by: 1

Related to: 10