Work

Enhanced Writability of 4P4N CFET SRAM Cell With Transmission Gates

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3560269

Authors: Seung-Woo Jung, In Ki Kim, Sung-Min Hong

Institution: Gwangju Institute of Science and Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Research Foundation of Korea

OpenAlex ID: W4409761406

FWCI: 0.907

Cites: 24

Cited by: 4

Related to: 10