Work

Performance Evaluation of Gate-Recessed AlGaN/GaN T-Gated MOSHEMTs for Next-Generation Power Electronics

Year: 2025

Type: conference-paper

Source: International Conference on Integrated Circuits and Communication Systems (ICICACS)

DOI: 10.1109/icicacs65178.2025.10967973

Authors: Lavanya Repaka, J. Ajayan, Sandip Bhattacharya

Institution: SR University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409762050

FWCI:

Cites: 15

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Related to: 10