Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Authors: K. Izukashi, D. Matsubayashi, A. Belmonte, S. Kundu, Y. Wan, F. G. Redondo, H. Oh, A. Sharma, S. Subhechha, H. Puliyalil, A. Chasin, H. Dekkers, A. Pavel, N. Rassoul, G. S. Kar
Institutions: Sony Semiconductor Solutions Corporation (Japan), IMEC
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4409762305