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Enhancing Dopingless TFETs with SiGe Heterojunctions: A Reliability Perspective

Year: 2025

Type: conference-paper

DOI: 10.1109/icsc64553.2025.10968683

Authors: Madhura Prashant Bakshi, Bandi Venkata Chandan, Kaushal Kumar Nigam, Ashish Kumar, Adil Tanveer, Ashok Vaddeswarapu

Institution: National Institute of Technology Raipur

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4409762790

FWCI:

Cites: 13

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Related to: 10