Work

Investigation of Stacked Gate Dielectrics in AlGaN/GaN MOS-HEMTs for High-Voltage Applications

Year: 2025

Type: conference-paper

Source: International Conference on Integrated Circuits and Communication Systems (ICICACS)

DOI: 10.1109/icicacs65178.2025.10968526

Authors: Lavanya Repaka, J. Ajayan, Sandip Bhattacharya

Institution: SR University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409763642

FWCI:

Cites: 14

Cited by:

Related to: 10