Work

One Transistor−One Memristor Integrated Device Based on the Dual Conductive Filament Mechanism

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c00267

Authors: Liang Zhao, Zhidong Pan, Yao Zhou, Tu Zhao, Xuming Wu, Nengjie Huo

Institutions: South China Normal University, Lingnan Normal University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Lingnan Normal University, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1460198728, G5940522114, G6427148335

OpenAlex ID: W4409764306

FWCI: 2.486

Cites: 47

Cited by: 11

Related to: 10