Year: 2025
Type: article
Abstract: Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semiconductor platform. In this detailed investigation of the defect's 16-dimensional ground state spin manifold at millikelvin temperatures, a wide range of previously unreported transitions are observed which are accurately described using a theoretical model that includes strain. Using a superconducting microcoil we achieve Rabi frequencies exceeding 20 MHz and perform the first coherent manipulation of a direct hyperfine transition. These insights further underscore the defect's potential for strain engineering and sensing, as well as for fault-tolerant qudit encoding.
Source: Physical Review Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4409765616
