Work

MoS2 Transistors with 4 nm hBN Gate Dielectric and 0.46 V Threshold Voltage

Year: 2025

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.5c02341

Authors: Yaqing Shen, Sebastian Pazos, Wenwen Zheng, Yue Yuan, Yue Ping, Osamah Alharbi, Hang Liu, Xu Lu, Mario Lanza

Institutions: King Abdullah University of Science and Technology, National University of Singapore, Institute for Functional Intelligent Materials

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: King Abdullah University of Science and Technology

Award: G6055922401

OpenAlex ID: W4409766017

FWCI: 3.324

Cites: 53

Cited by: 16

Related to: 10