Work

Substrate preparation methods for improved synthesis of Bi2Se3 films grown on sapphire by molecular beam epitaxy

Year: 2025

Type: article

Abstract: Bi2Se3 thin films have grown in popularity as three-dimensional topological insulators with a host of potential applications. While the films themselves have been widely researched, improvements derived from better substrate preparation have lagged. In this study, investigations into the preparation of c-plane sapphire (c-sapphire) substrates and the influence on film quality were done. Analysis on the effects of substrate pretreat by ultra-high vacuum annealing of the substrates, the use of Nano-strip® as an etchant, and high temperature in air anneal of c-sapphire to form a terraced morphology on Bi2Se3 thin film growth were done for this study.

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0004429

Authors: R. Trice, M. Yu, A. Richardella, M. Hilse, S. Law

Institutions: Pennsylvania State University, University of Delaware

Language: English

Topic: Topological Materials and Phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funder: Division of Materials Research

Award: G4653638168