A 14 nm SRAM Using NMOS Header Assist Cell for Improved Write Ability and Reduced Cell Retention Leakage With Minimal Power Overhead
Year: 2025
Type: article
Authors: Jungmyung Kang, Keonhee Cho, Sekeon Kim, Giseok Kim, Hyunjun Kim, Dongwook Seo, Sangyeop Baeck, Sei Seung Yoon, Seong-Ook Jung
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Samsung
Award: G4757329456
OpenAlex ID: W4409795915