Work

Designing a 2kV GaN p-i-n Diode Considering the Photon Recycling Phenomenon

Year: 2025

Type: conference-paper

Source: Proceedings of IEEE Southeastcon

DOI: 10.1109/southeastcon56624.2025.10971578

Authors: Eniola Ajegbemika, Monzurul Alam

Institution: North Carolina Agricultural and Technical State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4409796488

FWCI:

Cites: 24

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Related to: 10