Photoelectric properties of metal–insulator–semiconductor structures based on HgCdTe nBn with a superlattice in the barrier region
Year: 2024
Type: article
Source: Journal of Optical Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Russian Science Foundation
Award: G8519964754
OpenAlex ID: W4409801611
