Work

Selective Area Growth of High-Quality In-Plane GaAs Nanowires and Nanowire Networks by Molecular Beam Epitaxy on Ge Substrates

Year: 2025

Type: article

Source: Chinese Physics Letters

DOI: 10.1088/0256-307x/42/6/067502

Authors: Fengyue 凤悦 He 贺, Xiyu 曦宇 Hou 侯, Xiuming 秀明 Dou 窦, Yukun 钰坤 Yin 殷, Dong 东 Pan 潘, Jianhua 建华 Zhao 赵

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Beihang University

Language: English

Topic: Nanowire Synthesis and Applications

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409813225

FWCI: 0.48

Cites: 50

Cited by: 2

Related to: 10