Work

High‐Electric Field Ultraviolet‐C Electroluminescence from LuPO4:Bi3+ Film on Silicon Substrate

Year: 2025

Type: article

Abstract: Lutetium orthophosphate (LuPO4) film has been developed by an all‐solution process sol–gel spin coating method on a silicon substrate. The film is activated by Bi3+ ions that are utilized for an electroluminescent (EL) device. The film is annealed in optimum temperature and Bi3+ concentration and formed as a tetragonal single‐phase LuPO4 crystal, which has been confirmed by crystallographic analysis. A thin Au is utilized as a transparent electrode and integrated into the device. Thereby, under high‐electric field excitation, the EL device emits an ultraviolet‐C (UVC) spectrum with an emission center at 238 nm, which is optically attributed to the A‐band transition of Bi3+ ions. Further optical and electro‐optical properties are investigated, and the results are comprehensively examined. This demonstration of Bi3+‐doped LuPO4 presents a maiden realization of the environmentally friendly UVC‐emitting device based on orthophosphate film on silicon photonics and will pave the way for the advanced development of mercury‐free UV sources based on thin‐film EL.

Source: physica status solidi (RRL) - Rapid Research Letters

DOI: 10.1002/pssr.202500061

Authors: Mohammad M. Afandi, Jongsu Kim

Institution: Pukyong National University

Language: English

Topic: Luminescence Properties of Advanced Materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $4,430

Funders: National Research Foundation, Ministry of Education, National Research Foundation of Korea