Work

Prospects for THz optoelectronic devices using chalcogenide topological materials and recent progress on their synthesis by molecular beam epitaxy [Invited]

Year: 2025

Type: article

Abstract: Topological materials are among the most attractive candidates for developing terahertz (THz) optoelectronic components due to their topologically protected surface states and strong spin-orbit coupling, which give rise to unique material properties such as ultrafast carrier dynamics and enhanced plasmonic response in the THz range. In this work, we have reviewed the recent progress on the molecular beam epitaxy (MBE) synthesis and THz optoelectronic device applications of the technologically important chalcogenide TI materials: Bi 2 Se 3 , Bi 2 Te 3 , Sb 2 Te 3 , Pb 1-x Sn x Se alloys, and SnTe. While high-performance and energy-efficient THz devices have been demonstrated using MBE-grown Bi 2 Se 3 , Bi 2 Te 3 , and Sb 2 Te 3 by exploiting their topological properties, THz devices utilizing Pb 1-x Sn x Se alloys and SnTe films remain to be scarce; yet their topological crystalline insulator (TCI) band structures and well-established MBE synthesis techniques have promised significant potential for advancing next-generation THz platforms in these materials.

Source: Optical Materials Express

DOI: 10.1364/ome.562065

Authors: Qihua Zhang, Yongxi Ou, Maria Hilse, Derrick Shao Heng Liu, Stephanie Law

Institution: Pennsylvania State University

Language: English

Topic: Topological Materials and Phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,843

Funder: Directorate for Mathematical and Physical Sciences