Nonvolatile Applications and Reliability Investigation of La-Doped ZrO2 Antiferroelectric Capacitors
Year: 2025
Type: article
Abstract: The nonvolatile application of La-doped ZrO2 (ZLO) antiferroelectric capacitors is demonstrated in this study, accompanied by systematic investigation of device reliability. A built-in electric field was successfully established through engineered work function modulation. The fabricated nonvolatile (NV) ZLO capacitor exhibits not only avoidance of wake-up and fatigue phenomena typically observed in ferroelectric systems but also demonstration of ultralow coercive voltage (2Vc = 1.2 V) and exceptional endurance exceeding 1012 cycles. The inherent unique polarization reversal mechanism in NV ZLO device was identified as the origin of a unidirectional imprint effect. Accelerated testing at 85 °C for 104 s yielded conclusive evidence of retention characteristic stability. This investigation provides a novel perspective for the engineering utilization of antiferroelectric materials and facilitates their potential incorporation into advanced integrated circuit architectures.
Source: Electronics
Authors: Jianguo Li, Junliang Zhou, Wenchao Yan, Zibo Dong, Yuetong Huo, ChoongHyun Lee, Zeping Weng, Yi Zhao
Institutions: Zhejiang University, East China Normal University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,896
Awards: G7911741107, G8736548684
OpenAlex ID: W4409869749