Work

Band Alignment, Thermal Transport Property, and Electrical Performance of High-Quality β-Ga2O3/AlN Schottky Barrier Diode Grown via MOCVD

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c04203

Authors: An-Feng Wang, Hong-Ping Ma, Qi-Min Huang, Lin Gu, Yi Shen, Chengxi Ding, Yang-Chao Liu, Kun Xu, Li Zhucheng, Li Zhang, Xiaodong ZHANG, Qing-Chun Zhang

Institutions: Fudan University, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Science and Technology Innovation Plan Of Shanghai Science and Technology Commission

Awards: G249392647, G2769300870, G3842340600, G6752143353, G838095216, G8987701284

OpenAlex ID: W4409872281

FWCI: 2.39

Cites: 55

Cited by: 15

Related to: 10