Numerical analysis of inter-valley electrons transferring behavior in GeSn alloys for optoelectronic applications
Year: 2025
Type: conference-paper
DOI: 10.1117/12.3067583
Authors: Shihao Huang, Jiapeng Li, Hailin Li, Qinqin Sun, Wenming Xie, Qiongyu Li, Fengyan Zhao
Institution: Fujian University of Technology
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4409874901
