Work

Impact of electric field reconstruction on gate oxide degradation in 1200 V 4H–SiC MOSFET induced by heavy ion radiation

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/add1e7

Authors: Yuhan Duan, Botao Sun, Lindong Ma, Pan Liu, Guangyin Lei, Jiajie Fan, Bo Gao, Qingchun Jon Zhang, Bo Wang

Institutions: Fudan University, Shanghai Institute of Measurement and Testing Technology, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Technology Innovation 2025 Major Project of Ningbo

OpenAlex ID: W4409913264

FWCI:

Cites: 25

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Related to: 10