Work

Voltage-Driven Reverse Recovery in Semiconductor Devices: A Diffusion Capacitance Perspective and Behavioral Model for SiC MOSFETs

Year: 2025

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2025.3565555

Authors: Xiaobo Dong, Laili Wang, Qi Zhou, Haoyuan Jin, Qingshou Yang, Long Yuan

Institutions: State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, State Grid Jiangsu Electric Power (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409916688

FWCI: 0.452

Cites: 15

Cited by: 2

Related to: 10