Work

Retention Characteristic Optimization Based on Combined Forming Scheme for Resistive Random Access Memory Chip

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3565496

Authors: Qingyun Zuo, Xu Zheng, Yudi Zhao, Wubo Li, Yixuan Liu, Qiqiao Wu, Yifei Lu, Yuhang Zhao, Wenchang Zhang, Xiaoxin Xu, Hao Min, Qi Liu

Institutions: Fudan University, State Key Laboratory of ASIC and System, Chinese Academy of Sciences, Institute of Microelectronics, Beijing Information Science & Technology University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G2076236949, G3722458669, G417164712, G6200683350, G8661498563

OpenAlex ID: W4409917136

FWCI: 0.227

Cites: 18

Cited by: 1

Related to: 10