Year: 2025
Type: article
Abstract: Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynamical decoupling, and real-time parameter estimation. In this work, we demonstrate a class of techniques to mitigate charge noise in semiconductor quantum dots by controlling the noise sources themselves. Using two different classical feedback methods, we stabilize an individual charged two-level fluctuator in a $\mathrm{Si}$/$\mathrm{Si}$-$\mathrm{Ge}$ quantum dot by exploiting sensitive gate-voltage dependence of the switching times. These control methods reduce the low-frequency component of the noise power spectrum by an order of magnitude. These techniques also enable stabilization of the fluctuator in either of its states. In the future, such techniques may enable improved coherence times in quantum dot spin qubits.
Source: Physical Review Applied
Authors: Feiyang Ye, Ammar Ellaboudy, John M. Nichol
Institution: University of Rochester
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Awards: G678410277, G7452299184, G8723866519
OpenAlex ID: W4409923209