A 100 Gb s−1 quantum-confined Stark effect modulator monolithically integrated with silicon nitride on Si
Year: 2025
Type: article
Abstract: The exponential growth of data-intensive artificial intelligence necessitates ultra-fast and energy efficient transceivers in data centres. Quantum-confined Stark effect (QCSE) modulators offer promising solutions, combining high-speed modulation with minimal footprint and superior energy efficiency. Here, we demonstrate a monolithically integrated O-band Ge/SiGe QCSE modulator operating at 100 Gb s−1, seamlessly integrated with silicon nitride (SiN) waveguides on both silicon and silicon-on-insulator substrates. Our modulator achieves <1 dB coupling loss, <63 fJ bit−1 energy consumption, and >5 dB static extinction ratio, while maintaining performance across a 20–80 °C temperature range. Leveraging CMOS-compatible fabrication processes, we incorporate multiple quantum-well stacks grown at wafer scale on silicon, enabling large-scale production. The modulator’s substrate-agnostic integration with back-end of line grown SiN layers, presents a scalable approach for cost-effective co-integration of electronic and photonic components. This work advances high-speed, energy-efficient optical modulators and paves the way for next-generation photonic integrated circuits in data centre interconnects.
Source: Communications Engineering
Institutions: University of Southampton, Rockley Photonics (United States)
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,190
Awards: Energy- and Size-efficient Ultra-fast Plasmonic Circuits for Neuromorphic Computing Architectures, G1221395661, G5045220161, QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS), G6552213384, Rockley Photonics and the University of Southampton: A Prosperity Partnership, G7422605034, G8653321987, G947613040
OpenAlex ID: W4409986909