Work

Junction Temperature Monitoring of GaN HEMT by Using On-Resistance with Voltage Clamp and Current Shunt

Year: 2025

Type: conference-paper

Source: IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI: 10.1109/apec48143.2025.10977195

Authors: Xiao Wang, Mingrui Zou, Jiakun Gong, Yulei Wang, Zheng Zeng

Institution: Chongqing University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Research and Innovation Foundation

OpenAlex ID: W4409991606

FWCI: 7.771

Cites: 13

Cited by: 3

Related to: 10