Work

Automated Characterization Platform for Comprehensive Dynamic Rdson Assessment of GaN HEMTs From 50 K to 400 K

Year: 2025

Type: conference-paper

Source: IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI: 10.1109/apec48143.2025.10977105

Authors: Tian Qiu, Zheyu Zhang, Purushottam Khadka, Ahmed Siraj, Dilip Rana

Institution: Rensselaer Polytechnic Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4409991640

FWCI: 7.532

Cites: 19

Cited by: 3

Related to: 10