Work

Improvement in Short-Circuit Robustness of SiC-MOSFETs based Power Modules using Two-Level Turn-On (2LTO)

Year: 2025

Type: conference-paper

Source: IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI: 10.1109/apec48143.2025.10977439

Authors: Muhammad Muneeb Alam, Saad Khalid, Nisar Ahmed Khan, Ngoc Ho Tran, Sebastian Strache

Institution: Robert Bosch (Germany)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4409991980

FWCI:

Cites: 7

Cited by:

Related to: 10