Work

A Highly Integrable, Modular and Multi-Functional Fault Monitoring Active Gate Driver with Parallel Buffers for a Global Enhanced Reliability of Gen. 3 SiC Power MOSFETs

Year: 2025

Type: conference-paper

Source: IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI: 10.1109/apec48143.2025.10977120

Authors: Mathis Picot-Digoix, Léo Seugnet, Frédéric Richardeau, Jean-Marc Blaquière, Sébastien Vinnac, Thanh-Long Le, Stéphane Azzopardi

Institutions: Safran (France), Centre National de la Recherche Scientifique, Université Toulouse III - Paul Sabatier, Institut National Polytechnique de Toulouse, Laboratoire Plasma et Conversion d'Energie, Université de Toulouse

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409992169

FWCI:

Cites: 17

Cited by:

Related to: 10