Work

State Of The Art 1.7kV Lateral Gan HEMTs, An Alternative To SiC

Year: 2025

Type: conference-paper

Source: IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI: 10.1109/apec48143.2025.10977244

Authors: Karthick Murukesan, Robert Yang, Kamal Varadarajan, Sorin Georgescu, Doug Kang

Institution: Power Integrations (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4409992286

FWCI: 7.075

Cites: 7

Cited by: 3

Related to: 10