Work

A Fast Short-Circuit Protection Method for Ohmic gate P-GaN HEMT Based on Gate Charge

Year: 2025

Type: conference-paper

Source: IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI: 10.1109/apec48143.2025.10977391

Authors: Yue Wu, Xi Jiang, Song Yuan, Xiaowu Gong, Zhaoheng Yan, Jiahong Chen, Yun Xu, Jinjie Liu

Institution: Xidian University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Young Scientists Fund

OpenAlex ID: W4409992371

FWCI: 2.358

Cites: 12

Cited by: 1

Related to: 10